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AO4496
30V N-Channel MOSFET
General Description
The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application.
Product Summary
VDS (V) = 30V ID = 10A RDS(ON) < 19.5mΩ RDS(ON) < 26mΩ
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8
Top View
Bottom View
D
D D
D
D
G
S S S
G S
Absolute Maximum Ratings TJ=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Avalanche Current G
IAR
Repetitive avalanche energy L=0.