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AO4496 - 30V N-Channel MOSFET

General Description

The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for use as a DC-DC converter application.

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AO4496 30V N-Channel MOSFET General Description The AO4496 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a DC-DC converter application. Product Summary VDS (V) = 30V ID = 10A RDS(ON) < 19.5mΩ RDS(ON) < 26mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.