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AO4462 - N-Channel MOSFET

General Description

The AO4462 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM www.DataSheet4U.com applications.

Key Features

  • VDS (V) = 30V (V GS = 10V) ID = 11A RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D S S S G D D D D SOIC-8 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 11 9 40 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter.

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Other Datasheets by Alpha & Omega Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4462 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4462 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM www.DataSheet4U.com applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard product AO4462 is Pb-free (meets ROHS & Sony 259 specifications). AO4462L is a Green Product ordering option. AO4462 and AO4462L are electrically identical. Features VDS (V) = 30V (V GS = 10V) ID = 11A RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.