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AO4459
30V P-Channel MOSFET
General Description
Product Summary
The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V)
100% UIS Tested 100% Rg Tested
-30V -6.5A < 46mW < 72mW
SOIC-8 D
Top View
Bottom View
D D
D
D
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
±20
Continuous Drain Current
TA=25°C TA=70°C
ID
-6.5 -5.3
Pulsed Drain Current C
IDM
-30
Avalanche Current C
IAS, IAR
17
Avalanche energy L=0.