Datasheet Details
| Part number | AO4456 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 177.50 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AO4456 Datasheet
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General Description
The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is www.DataSheet4U.com suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Key Features
- VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C ID.