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Alpha & Omega Semiconductors

AO4449 Datasheet Preview

AO4449 Datasheet

P-Channel MOSFET

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AO4449
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4449 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4449 is Pb-free (meets ROHS & Sony 259
specifications).
Features
VDS (V) = -30V
ID = -7 A (VGS = -10V)
RDS(ON) < 34m(VGS = -10V)
RDS(ON) < 54m(VGS = -4.5V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current F
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-7
-4.6
-40
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
60
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com




Alpha & Omega Semiconductors

AO4449 Datasheet Preview

AO4449 Datasheet

P-Channel MOSFET

No Preview Available !

AO4449
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
ID(ON)
www.DataSheet4U.com
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-7A
VGS=-4.5V, ID=-5A
Forward Transconductance
VDS=-5V, ID=-7A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-7A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=2.2,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-7A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-7A, dI/dt=100A/µs
Min
-30
-1
-40
Typ Max Units
-1
-5
±100
-2 -3
27
38
43
15
-0.77
34
54
-1
-3.5
V
µA
nA
V
A
m
m
S
V
A
980 1225
150
115
2.2 3.3
pF
pF
pF
18.7 24
9.6
3.2
4.8
7.7
6
20
7
21 26
13
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F.The current rating is based on the t 10s thermal resistance rating.
Rev0: Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


Part Number AO4449
Description P-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 4 Pages
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