Datasheet4U Logo Datasheet4U.com

AO4449 - 30V P-Channel MOSFET

General Description

The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4449 P-Channel MOSFET VBsemi
AO4440 N-Channel MOSFET Kexin
AO4441 P-Channel 60V MOSFET VBsemi
AO4442 N-Channel MOSFET Kexin
AO4444 N-Channel MOSFET Kexin

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4440 N-Channel MOSFET
AO4441 60V P-Channel MOSFET
AO4442 N-Channel MOSFET
AO4443 40V P-Channel MOSFET
AO4444 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4449 30V P-Channel MOSFET General Description Product Summary The AO4449 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -7A < 34mW < 54mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID -7 -5.5 Pulsed Drain Current C IDM -40 Avalanche Current C IAS, IAR 23 Avalanche energy L=0.1mH C EAS, EAR 26 TA=25°C Power Dissipation B TA=70°C PD 3.