900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Alpha & Omega Semiconductors

AO4442 Datasheet Preview

AO4442 Datasheet

N-Channel MOSFET

No Preview Available !

AO4442
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4442 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
www.DataSheet4oUp.ceormation with gate voltages from 4.5V to 25V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4442 is Pb-free
(meets ROHS & Sony 259 specifications). AO4442L
is a Green Product ordering option. AO4442 and
AO4442L are electrically identical.
Features
VDS (V) = 75V
ID = 3.1A (VGS = 10V)
RDS(ON) < 130m(VGS = 10V)
RDS(ON) < 165m(VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
75
±25
3.1
2.5
20
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
38
69
24
Max
50
80
30
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AO4442 Datasheet Preview

AO4442 Datasheet

N-Channel MOSFET

No Preview Available !

AO4442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=60V, VGS=0V
IGSS
VGS(th)
ID(ON)
www.DataSheetR4DUS.c(OoNm)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±25V
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=3.1A
VGS=4.5V, ID=2A
Forward Transconductance
VDS=5V, ID=3.1A
Diode Forward Voltage
IS=1A, VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=37.5V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=37.5V, ID=3.1A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=37.5V, RL=12,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3.1A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=3.1A, dI/dt=100A/µs
Min
75
1
20
Typ
2.4
100
180
120
8.2
0.79
303
37
17
2.2
5.2
2.46
1
1.34
4.5
2.3
15.6
1.9
22
22
Max Units
V
1
5 µA
100 nA
3V
A
130
220
m
165 m
S
1V
10 A
350 pF
pF
pF
3
6.5 nC
3.5 nC
nC
nC
ns
ns
ns
ns
30 ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : Sept 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.


Part Number AO4442
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 4 Pages
PDF Download

AO4442 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 AO4440 N-Channel MOSFET
Alpha & Omega Semiconductors
2 AO4441 P-Channel MOSFET
Alpha & Omega Semiconductors
3 AO4442 N-Channel MOSFET
Alpha & Omega Semiconductors
4 AO4443 40V P-Channel MOSFET
Alpha & Omega Semiconductors
5 AO4444 N-Channel MOSFET
Alpha & Omega Semiconductors
6 AO4444L 80V N-Channel MOSFET
Alpha & Omega Semiconductors
7 AO4446 N-Channel MOSFET
Alpha & Omega Semiconductors
8 AO4447 P-Channel MOSFET
Alpha & Omega Semiconductors
9 AO4447A 30V P-Channel MOSFET
Alpha & Omega Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy