The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AO4438
60V N-Channel MOSFET
General Description
The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS (V) = 60V ID = 8.2A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8
Top View
Bottom View
D
D D D
D
G
S S S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 60 ±20 8.2 6.6 40 3.