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AO4435 - P-Channel MOSFET

General Description

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Key Features

  • VDS = -30V ID = -10A (VGS = -10V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) The AO4435 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM.

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AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS = -30V ID = -10A (VGS = -10V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) The AO4435 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications).