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Alpha & Omega Semiconductors

AO4435 Datasheet Preview

AO4435 Datasheet

P-Channel MOSFET

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AO4435
30V P-Channel MOSFET
General Description
The AO4435 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
-RoHS Compliant
-AO4435 is Halogen Free
Product Summary
VDS = -30V
ID = -10.5A
(VGS = -20V)
RDS(ON) < 14m(VGS = -20V)
RDS(ON) < 18m(VGS = -10V)
RDS(ON) < 36m(VGS = -5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation A
Avalanche Current B
TA=25°C
TA=70°C
Repetitive avalanche energy 0.3mH B
PD
IAR
EAR
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
-30
±25
-10.5
-8
-80
3.1
2.0
-20
60
-55 to 150
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
32
60
17
Max
40
75
24
Units
V
V
A
W
A
mJ
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com




Alpha & Omega Semiconductors

AO4435 Datasheet Preview

AO4435 Datasheet

P-Channel MOSFET

No Preview Available !

AO4435
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID = -250µA, VGS = 0V
IDSS Zero Gate Voltage Drain Current
VDS = -30V, VGS = 0V
TJ = 55°C
IGSS Gate-Body leakage current
VDS = 0V, VGS = ±25V
VGS(th) Gate Threshold Voltage
VDS = VGS ID = -250µA
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
VGS = -20V, ID = -11A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS = -10V, ID = -10A
VGS = -5V, ID = -5A
gFS Forward Transconductance
VDS = -5V, ID = -10A
VSD Diode Forward Voltage
IS = -1A,VGS = 0V
IS Maximum Body-Diode Continuous Current
-30
-1.7
-80
-1
-5
±100
-2.3 -3
11
15
15
27
22
-0.74
14
19
18
36
-1
-3.5
V
µA
nA
V
A
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1130 1400 pF
240 pF
155 pF
1 5.8 8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V)
Qgs
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-10A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.5,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs
18 24 nC
9.5
5.5 nC
3.3 nC
8.7 ns
8.5 ns
18 ns
7 ns
25 30 ns
12 nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev7: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


Part Number AO4435
Description P-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 5 Pages
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