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Alpha & Omega Semiconductors

AO4429 Datasheet Preview

AO4429 Datasheet

P-Channel FET

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AO4429
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4429 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected. Standard
Product AO4429 is Pb-free (meets ROHS & Sony
259 specifications). AO4429L is a Green Product
ordering option. AO4429 and AO4429L are
electrically identical.
Features
VDS (V) = -30V
ID = -15 A (VGS = -10V)
Max RDS(ON) < 7.7m(VGS = -10V)
Max RDS(ON) < 12m(VGS = -4.5V)
ESD Rating: 4KV HBM
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-15
-12.8
-80
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
26
50
14
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AO4429 Datasheet Preview

AO4429 Datasheet

P-Channel FET

No Preview Available !

AO4429
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
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RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-15A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qg(4.5V) Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-15A
VGS=-10V, VDS=-15V, RL=1,
RGEN=3
IF=-15A, dI/dt=100A/µs
IF=-15A, dI/dt=100A/µs
Min
-30
-1.4
-80
Typ Max Units
-1
-10
±1
-1.8 -2.7
6.4
8.1
9
50
-0.71
7.7
12
-1
-5
V
µA
µA
V
A
m
m
S
V
A
5355
970
620
2.8
6400
4
pF
pF
pF
91 120
46 60
16
21
15
15
82.5
34
38 50
38
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Part Number AO4429
Description P-Channel FET
Maker Alpha & Omega Semiconductors
Total Page 4 Pages
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