Datasheet Summary
AO4429 P-Channel Enhancement Mode Field Effect Transistor
General Description
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Features
VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.7mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM
The AO4429 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4429 is Pb-free (meets ROHS & Sony 259 specifications). AO4429L is a Green Product ordering option. AO4429 and AO4429L are electrically identical.
SOIC-8 Top View S S S G D D D...