AO4423 Datasheet | Alpha & Omega Semiconductors

Description .. provide Features VDS (V) = -30V ID = -15A RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) ESD Rating: 6000V HBM The AO4423 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO4423L (Green Product) is offered in a lead-free package. AO4423 is Pb-free (meets ROHS & Sony 259 specifications). AO4423L is a Green Product ordering option. AO4423 and AO4423L are electrically identical. SOIC-8 Top View S S S G D D D D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A Maximum -30 ±25 -15 -12.1 -80 3.1 2 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 26 50 14 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4423, AO4423L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) .. Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=0V, VGS=±25V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-20V, ID=-15A TJ=125°C VGS=-10V, ID=-15A VGS=-6V, ID=-10A Min -30 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -100 -500 ±1 ±10 -2 -80 -2.7 5.7 7.1 6.8 9.4 43 -0.71 -3.5 7 8.6 8.5 12 -1 -4.2 n A µA µA V A mΩ mΩ mΩ S V A p F p F p F Ω n C n C n C ns ns ns ns ns n C ID(ON) RDS(ON) Static Drain-Source On-Resistance g FS VSD IS VDS=-5V, ID=-15A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous...