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AO4422A - N-Channel FET

General Description

The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 11 9.3 50 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Paramete.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4422A N-Channel Enhancement Mode Field Effect Transistor General Description The AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This www.DataSheet4U.com device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical. Features VDS (V) = 30V ID = 11A (V GS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.