Datasheet4U Logo Datasheet4U.com

AO4419 - 30V P-Channel MOSFET

General Description

The AO4419 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4419 30V P-Channel MOSFET General Description The AO4419 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -9.7A < 20mW < 35mW SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current TA=25°C TA=70°C ID -9.7 -7.8 Pulsed Drain Current C IDM -70 Avalanche Current C IAS, IAR -27 Avalanche energy L=0.