Datasheet4U Logo Datasheet4U.com

AO4415 - P-Channel FET

General Description

www.DataSheet4U.com provide

Key Features

  • VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4415 P-Channel MOSFET Freescale
AO4415 P-Channel 30V MOSFET VBsemi
AO4410 N-Channel MOSFET VBsemi
AO4410 N-Channel MOSFET Kexin
AO4414 N-Channel 20V MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4410 30V N-Channel MOSFET
AO4411 30V P-Channel MOSFET
AO4412 N-Channel FET
AO4413 30V P-Channel MOSFET
AO4413A P-Channel FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
August 2002 AO4415 P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -8 A RDS(ON) < 26mΩ (VGS = -20V) RDS(ON) < 35mΩ (VGS = -10V) The AO4415 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±25 -8 -6.6 -40 3 2.