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Alpha & Omega Semiconductors

AO4412 Datasheet Preview

AO4412 Datasheet

N-Channel FET

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AO4412
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4412 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON) and ultra low gate charge for
use has a fast high side switch. The source leads are
separated to allow a Kelvin connection to the source,
which may be used to bypass the source
inductance.Standard product AO4412 is Pb-free
(meets ROHS & Sony 259 specifications). AO4412L
is a Green Product ordering option. AO4412 and
AO4412L are electrically identical.
Features
VDS (V) = 30V
ID = 8.5A
(VGS = 10V)
RDS(ON) < 26m(VGS = 10V)
RDS(ON) < 34m(VGS = 4.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.5
7.1
60
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W




Alpha & Omega Semiconductors

AO4412 Datasheet Preview

AO4412 Datasheet

N-Channel FET

No Preview Available !

AO4412
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=24V, VGS=0V
IGSS
VGS(th)
ID(ON)
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RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=8.5A
VGS=4.5V, ID=5A
Forward Transconductance
VDS=5V, ID=5A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=15V, ID=8.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.8,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Min
30
1
30
Typ
1.8
22
28
0.76
590
162
40
0.45
6.04
1.46
2.56
3.7
3.5
14.9
2.5
26
20
Max Units
V
1
5
µA
100 nA
3V
A
26 m
34 m
S
1V
4A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Part Number AO4412
Description N-Channel FET
Maker Alpha & Omega Semiconductors
Total Page 4 Pages
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