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AO4410 - 30V N-Channel MOSFET

General Description

The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance.

This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4410 30V N-Channel MOSFET General Description The AO4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. Product Summary VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 10V) RDS(ON) < 6.2mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.