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Alpha & Omega Semiconductors

AO4409 Datasheet Preview

AO4409 Datasheet

30V P-Channel MOSFET

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AO4409
30V P-Channel MOSFET
General Description
Product Summary
The AO4409 uses advanced trench technology to provide
excellent RDS(ON), and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
* RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
-30V
-15A
< 7.5m
< 12m
Top View
D
D
D
D
SOIC-8
Bottom View
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.3mH C
ID
IDM
IAS, IAR
EAS, EAR
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum
-30
±20
-15
-12.8
-80
30
135
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
D
S
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev.8.0: July 2013
www.aosmd.com
Page 1 of 5




Alpha & Omega Semiconductors

AO4409 Datasheet Preview

AO4409 Datasheet

30V P-Channel MOSFET

No Preview Available !

AO4409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-15A
VGS=-4.5V, ID=-10A
Forward Transconductance
VDS=-5V, ID=-15A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-30
-1.4
-80
35
-5
-25
±100
-1.9 -2.7
6.2
8.2
9.5
50
-0.71
7.5
11.5
12
-1
-5
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
5270
945
745
2
6400
3
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
100 120 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=-10V, VDS=-15V, ID=-15A
51.5 nC
14.5 nC
Qgd Gate Drain Charge
23 nC
tD(on)
Turn-On DelayTime
14 ns
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=1,
16.5 ns
tD(off)
Turn-Off DelayTime
RGEN=3
76.5 ns
tf Turn-Off Fall Time
37.5 ns
trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs
36.7 45
ns
Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
28 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.8.0: July 2013
www.aosmd.com
Page 2 of 5


Part Number AO4409
Description 30V P-Channel MOSFET
Maker Alpha & Omega Semiconductors
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AO4409 Datasheet PDF






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