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AO4409 - 30V P-Channel MOSFET

General Description

The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.

This device is suitable for use as a load switch or in PWM applications.

RoHS and Halogen-Free Complian

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4409 30V P-Channel MOSFET General Description Product Summary The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) * RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested -30V -15A < 7.5mΩ < 12mΩ Top View D D D D SOIC-8 Bottom View G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.