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AO4408L - N-Channel MOSFET

Download the AO4408L datasheet PDF (AO4408 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast www.DataSheet4U.com switching.

This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

AO4408L(Green Product) is offered in a lead-free package.

Features

  • VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 12 10 80 30 100 3 2.1 -55 to 150 Units V V A A mJ W °C VGS TA=25°C TA=70°C ID IDM IAV B,E Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25°C TA=70°C Junction and Storage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AO4408_AlphaOmegaSemiconductors.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Rev 3: June 2004 AO4408, AO4408L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast www.DataSheet4U.com switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408L(Green Product) is offered in a lead-free package. Features VDS (V) = 30V ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B Maximum 30 ±12 12 10 80 30 100 3 2.
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