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AO4408 - N-Channel MOSFET

General Description

The AO4408/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching.

This device makes an excellent high side switch for notebook CPU core DC-DC conversion.

AO4408 and AO4408L are electrically identical.

Key Features

  • VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive Avalanche Energy B L=0.3mH ID IDM IAV EAV Power Dissipation TA=25°C TA=70°C PD Junction and Storage Tem.

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📁 Similar Datasheet

Part Number Description Manufacturer
AO4408 N-Channel MOSFET Kexin
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AO4402 N-Channel MOSFET Freescale

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4408L N-Channel MOSFET
AO4400 N-Channel MOSFET
AO4401 P-Channel MOSFET
AO4402 20V N-Channel MOSFET
AO4402G 20V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408 and AO4408L are electrically identical. -RoHS Compliant -AO4408L is Halogen Free Features VDS (V) = 30V ID = 12A (VGS = 10V) RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current B Repetitive Avalanche Energy B L=0.