Datasheet Details
| Part number | AO4407C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 287.16 KB |
| Description | P-Channel MOSFET |
| Download | AO4407C Download (PDF) |
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| Part number | AO4407C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 287.16 KB |
| Description | P-Channel MOSFET |
| Download | AO4407C Download (PDF) |
|
|
|
• Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) -30V -14A < 11.5mΩ < 18.5mΩ Applications • Notebook AC-in Load Switch • Battery Protection Charge/Discharge 100% UIS Tested 100% Rg Tested SO-8 Top View D D D D Bottom View G S S S Top View S1 S2 S3 G4 8D 7D 6D 5D Orderable Part Number AO4407C Package Type SO-8 Form Tape & Reel D G S Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH TA=25°C Power Dissipation B TA=70°C C VGS ID IDM IAS EAS PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -14 -11 -56 -33 54 3.1 2.0 -55 to 150 Units V V A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W Rev.1.0: November 2019 www.aosmd.com Page 1 of 5 AO4407C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V IDSS Zero Gate Voltage Drain Current • Latest VDS=-30V, VGS=0V advanced Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA VGS=-10V, ID=-14A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A gFS Forward Transconductance VDS=-5V, ID=-14A VSD Diode Forward Voltage IS=-1A, VGS=0V IS Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-15V, f=1
AO4407C 30V P-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4407 | P-Channel MOSFET | Freescale |
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AO4407 | P-Channel MOSFET | VBsemi |
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AO4407 | P-Channel MOSFET | Kexin |
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AO4407A | P-Channel MOSFET | Freescale |
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AO4407A | P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4407 | P-Channel MOSFET |
| AO4407A | 30V P-Channel MOSFET |
| AO4400 | N-Channel MOSFET |
| AO4401 | P-Channel MOSFET |
| AO4402 | 20V N-Channel MOSFET |
| AO4402G | 20V N-Channel MOSFET |
| AO4403 | 30V P-Channel MOSFET |
| AO4404 | N-Channel MOSFET |
| AO4404B | 30V N-Channel MOSFET |
| AO4405 | 30V P-Channel MOSFET |