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AO4407A - 30V P-Channel MOSFET

Description

The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

RoHS and Halogen-Free Complaint Product Summary VDS = -30V ID = -12A (VGS = -20V) RDS(ON

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AO4407A 30V P-Channel MOSFET General Description The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. * RoHS and Halogen-Free Complaint Product Summary VDS = -30V ID = -12A (VGS = -20V) RDS(ON) < 11mΩ (VGS = -20V) RDS(ON) < 13mΩ (VGS = -10V) RDS(ON) < 17mΩ (VGS = -6V) 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Avalanche Current G IAR Repetitive avalanche energy L=0.
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