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AO4406AL - N-Channel MOSFET

Description

The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Features

  • VDS (V) = 30V ID = 12A RDS(ON) < 11.5mΩ RDS(ON) < 15.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! SOIC-8 D S S S G D D D D G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 12 10 100 22 24 3.1 2 -55 to 150 Units V V A A mJ W °C TC=25°C TC=70°C ID IDM IAR EAR P.

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Full PDF Text Transcription

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AO4406AL N-Channel Enhancement Mode Field Effect Transistor General Description The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. Features VDS (V) = 30V ID = 12A RDS(ON) < 11.5mΩ RDS(ON) < 15.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! SOIC-8 D S S S G D D D D G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 12 10 100 22 24 3.
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