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Alpha & Omega Semiconductors

AO4406AL Datasheet Preview

AO4406AL Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AO4406AL
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4406AL uses advanced trench technology to
provide excellent RDS(ON) with low gate charge.
This device is suitable for high side switch in SMPS and
general purpose applications.
VDS (V) = 30V
ID = 12A
RDS(ON) < 11.5m
RDS(ON) < 15.5m
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
- RoHS Compliant
- Halogen Free
100% UIS Tested!
100% R g Tested!
SOIC-8
D
G
S
D
SD
SD
SD
GD
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=70°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
Power Dissipation B
TC=25°C
TC=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
12
10
100
22
24
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/




Alpha & Omega Semiconductors

AO4406AL Datasheet Preview

AO4406AL Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AO4406AL
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=12A
VGS=4.5V, ID=10A
Forward Transconductance
VDS=5V, ID=12A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30
1.5
100
1.9
9.5
14
12.5
45
0.75
1
5
100
2.5
11.5
17
15.5
1
4
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
610 760 910
88 125 160
40 70 100
0.8 1.6 2.4
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
11 14 17 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=15V, ID=12A
5 6.6 8 nC
1.9 2.4 2.9 nC
Qgd Gate Drain Charge
1.8 3 4.2 nC
tD(on)
Turn-On DelayTime
4.4 ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.25,
RGEN=3
9
17
ns
ns
tf Turn-Off Fall Time
6 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs
5.6 7
8 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
6.4 8 9.6 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P D is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 0 : Oct-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AO4406AL
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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AO4406AL Datasheet PDF






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