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Alpha & Omega Semiconductors

AO4406 Datasheet Preview

AO4406 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion. AO4406 and
AO4406L are electrically identical.
-RoHS Compliant
-AO4406L is Halogen Free
Features
VDS (V) = 30V
ID = 11.5A (VGS = 10V)
RDS(ON) < 14m(VGS = 10V)
RDS(ON) < 16.5m(VGS = 4.5V)
RDS(ON) < 26m(VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current AF
TA=25°C
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Repetitive Avalanche Energy B L=0.3mH
ID
IDM
IAV
EAV
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
11.5
9.6
80
25
94
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AF
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
23
48
12
Max
40
65
16
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/




Alpha & Omega Semiconductors

AO4406 Datasheet Preview

AO4406 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AO4406
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
VDS=0V, VGS= ±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=10V, ID=12A
TJ=55°C
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
VGS=2.5V, ID=8A
Forward Transconductance
VDS=5V, ID=10A
Diode Forward Voltage
IS=10A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=4.5V, VDS=15V, ID=11.5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.2,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
Min
30
0.8
60
25
0.4
13.5
Typ
1
11.5
16
13.5
19.5
38
0.83
1630
201
142
0.8
18
2.5
5.5
4
5
32
5
18.7
12.5
Max
1
5
100
1.5
14
19.2
16.5
26
1
4.5
2300
200
1.8
24
6
7.5
50
10
24
15
Units
V
µA
nA
V
A
m
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t10s junction to ambient thermal resistance rating.
Rev9: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.datasheet4u.com/


Part Number AO4406
Description N-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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AO4406 Datasheet PDF






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