AO4402
Description
Product Summary
The AO4402 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V)
100% UIS Tested 100% Rg Tested
20V 20A < 5.5m W < 7m W
SOIC-8
Top View
Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C TA=70°C
Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1m H C
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±12 20 16 140 57 162 3.1 2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State
Rq JA
31 59
Maximum Junction-to-Lead
Steady-State
Rq...
