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Alpha & Omega Semiconductors

AO4401 Datasheet Preview

AO4401 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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July 2001
AO4401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
Features
VDS (V) = -30V
ID = -6.1 A
RDS(ON) < 46m(VGS = -10V)
RDS(ON) < 61m(VGS = -4.5V)
RDS(ON) < 117m(VGS = -2.5V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Maximum
-30
±12
-6.1
-5.1
-60
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
31
59
16
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.




Alpha & Omega Semiconductors

AO4401 Datasheet Preview

AO4401 Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

AO4401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
IDSS
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-6.1A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-5A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=2.4,
RGEN=6
Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
Min
-30
-0.7
7
Typ Max Units
-1
-5
±100
-1 -1.3
38
49
76
11
-0.75
46
70
61
117
-1
-4.2
V
µA
nA
V
A
m
m
m
S
V
A
940 pF
104 pF
73 pF
6
9.4 nC
2 nC
3 nC
7.6 ns
8.6 ns
44.7 ns
16.5 ns
22.7 ns
15.9 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.


Part Number AO4401
Description P-Channel Enhancement Mode Field Effect Transistor
Maker Alpha & Omega Semiconductors
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AO4401 Datasheet PDF






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