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AS7C33512NTF18A 3.3V 512K x 18 Flowthrough Synchronous SRAM

AS7C33512NTF18A Description

November 2004 ® AS7C33512NTF18A 3.3V 512K×18 Flowthrough Synchronous SRAM with NTDTM .
The AS7C33512NTF18A family is a high performance CMOS 8 Mbit Synchronous Static Random Access Memory (Flowthrough SRAM) organized as 524,288 words × 1.

AS7C33512NTF18A Features

* Organization: 524,288 words × 18 bits
* NTD™ architecture for efficient bus operation
* Fast clock to data access: 7.5/8.5/10 ns
* Fast OE access time: 3.5/4.0 ns
* Fully synchronous operation
* Flow-through mode
* Asynchronous output enable

AS7C33512NTF18A Applications

* requiring random access or readmodify-write operations. NTD™ devices use the memory bus more efficiently by introducing a write latency that matches one-cycle flow-through read latency. Write data is applied one cycle after the write command and address, allowing the read pipeline to clear. With NTD

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3.3V 512K Flowthrough Synchronous SRAM Alliance Semiconductor Corporation
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