AS7C33512FT18A - 3.3V 512K x 18 Flow-through synchronous SRAM

Product Overview

Alliance Semiconductor Corporation

Part number	AS7C33512FT18A
Manufacturer	Alliance Semiconductor Corporation
File Size	551.92 KB
Description	3.3V 512K x 18 Flow-through synchronous SRAM
Datasheet	AS7C33512FT18A Datasheet
Additional preview pages of the AS7C33512FT18A datasheet.

The AS7C33512FT18A is a high-performance CMOS 8-Mbit synchronous Static Random Access Memory (SRAM) device organized as 524,288 words × 18 bits.

Fast cycle times of 8.5/10/12 ns with clock access times (tCD) of 7.5/8.5/10ns.

Three chip enable (CE) inputs permit easy memory expansion.

Organization: 524,288 words × 18 bits Fast clock to data access: 7.5/8.5/10ns Fast OE access time: 3.5/4.0 ns Fully synchronous flow-through operation Asynchronous output enable control Available in 100-pin TQFP package Individual byte write and global write.
Multiple chip enables for easy expansion 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ L.

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AS7C33512FT32A - (AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512FT36A - (AS7C33512FT32A / AS7C33512FT36A) 3.3V 512K x 32/36 Flow-through synchronous SRAM
AS7C33512NTD18A - 3.3V 512K x 18 Pipelined burst Synchronous SRAM
AS7C33512NTD32A - (AS7C33512NTD32A / AS7C33512NTD36A) 3.3V 512K x 32/36 Pipelined SRAM
AS7C33512NTD36A - (AS7C33512NTD32A / AS7C33512NTD36A) 3.3V 512K x 32/36 Pipelined SRAM
AS7C33512NTF18A - 3.3V 512K x 18 Flowthrough Synchronous SRAM

Published: Jan 1, 2009 |