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AS7C33256PFD32A - (AS7C33256PFD32A / AS7C33256PFD36A) 3.3V 256K x 32/36 pipelined burst synchronous SRAM

Description

The AS7C33256PFD32A and AS7C33256PFD36A are high-performance CMOS 8-Mbit Synchronous Static Random Access Memory (SRAM) devices organized as 262,144 words x 32 or 36 bits, and incorporate a two-stage register-register pipeline for highest frequency on any given technology.

Features

  • Organization: 262,144 words x 32 or 36 bits Fast clock speeds to 166 MHz Fast clock to data access: 3.5/4.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous register-to-register operation Dual-cycle deselect Asynchronous output enable control Available in100-pin TQFP.
  • Individual byte write and global write Multiple chip enables for easy expansio.

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Datasheet Details

Part number AS7C33256PFD32A
Manufacturer Alliance Semiconductor Corporation
File Size 573.75 KB
Description (AS7C33256PFD32A / AS7C33256PFD36A) 3.3V 256K x 32/36 pipelined burst synchronous SRAM
Datasheet download datasheet AS7C33256PFD32A Datasheet

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Part Number Description
AS7C33256PFD36A (AS7C33256PFD32A / AS7C33256PFD36A) 3.3V 256K x 32/36 pipelined burst synchronous SRAM
AS7C33256PFD18B 3.3V 256K x 18 pipeline burst synchronous SRAM
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December 2004 ® AS7C33256PFD32A AS7C33256PFD36A 3.3V 256K × 32/36 pipelined burst synchronous SRAM Features • • • • • • • • Organization: 262,144 words x 32 or 36 bits Fast clock speeds to 166 MHz Fast clock to data access: 3.5/4.0 ns Fast OE access time: 3.5/4.0 ns Fully synchronous register-to-register operation Dual-cycle deselect Asynchronous output enable control Available in100-pin TQFP • • • • • • • Individual byte write and global write Multiple chip enables for easy expansion Linear or interleaved burst control Snooze mode for reduced power-standby Common data inputs and data outputs 3.3V core power supply 2.5V or 3.3V I/O operation with separate VDDQ www.DataSheet4U.
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