AS8C403600 Datasheet - Alliance Semiconductor

AS8C403600 3.3V Synchronous SRAMs

* * * * * * * TheAS8C403600/1800 are high- speed SRAMs organized as 128K x 36/256K x 18. The AS8C403600/401800 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be le.

AS8C403600 Features

* 128K x 36, 256K x 18 memory configurations Supports high system speed: Commercial:

* 150MHz 3.8ns clock access time LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control ( GW l ( ), byte write enable (BWE), and byte writes ( BWx) 3.3V core power

AS8C403600-AllianceSemiconductor.pdf