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AS6C8016-55TIN Datasheet, Alliance Semiconductor

AS6C8016-55TIN memory equivalent, low power cmos static random access memory.

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AS6C8016-55TIN Datasheet

Features and benefits

n
* Fast access time : 55ns n
* Low power consumption: Operating current : 30/20mA (TYP.) Standby current : 1.5µA (TYP.) SL-version n
* Single 2.7V ~ 3.6V power .

Description

The AS6C8016-55TIN is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of .

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TAGS

AS6C8016-55TIN
low
power
CMOS
static
random
access
memory
Alliance Semiconductor

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