AS6C8016-55TIN
AS6C8016-55TIN is low power CMOS static random access memory manufactured by Alliance Semiconductor.
FEATURES n- Fast access time : 55ns n- Low power consumption:
Operating current : 30/20m A (TYP.) Standby current : 1.5µA (TYP.) SL-version n- Single 2.7V ~ 3.6V power supply n- All inputs and outputs TTL patible n- Fully static operation n- Tri-state output n- Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15) n- Data retention voltage : 1.2V(MIN.) n- Package : 48-pin 12mm x 20mm TSOP-I n- Green & ROHS pliant
FUNCTIONAL BLOCK DIAGRAM
Vcc Vss
A0-A18
DECODER
512Kx16 MEMORY ARRAY
DQ0-DQ7 Lower Byte
DQ8-DQ15 Upper Byte
I/O DATA CIRCUIT
CE# CE2 WE# OE# LB# UB#
CONTROL CIRCUIT
COLUMN I/O
GENERAL DESCRIPTION
The AS6C8016-55TIN is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.
The AS6C8016-55TIN is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application.
The AS6C8016-55TIN operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL patible
PIN DESCRIPTION
SYMBOL DESCRIPTION
A0
- A18
Address Inputs
DQ0
- DQ15 Data Inputs/Outputs
CE#, CE2 Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB# Lower Byte Control
UB# Upper Byte Control
VCC Power Supply
VSS Ground
PRODUCT FAMILY
Product Family
Operating Temperature
AS6C8016-55TIN -40℃ ~ 85℃
Vcc Range 2.7 ~ 3.6V
Speed...
