• Part: AS6C8016-55TIN
  • Description: low power CMOS static random access memory
  • Manufacturer: Alliance Semiconductor
  • Size: 1.59 MB
Download AS6C8016-55TIN Datasheet PDF
AS6C8016-55TIN page 2
Page 2
AS6C8016-55TIN page 3
Page 3

AS6C8016-55TIN Datasheet Text

Revision History List 512K x 16 bit -AS6C8016-55TIN - 48-pin TSOP I PACKAGE Revision Rev. 1.0 Details Initial Issue Date November12.2015 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -1/11- Rev.1.0 Nov 2015 Features n- Fast access time : 55ns n- Low power consumption: Operating current : 30/20mA (TYP.) Standby current : 1.5µA (TYP.) SL-version n- Single 2.7V ~ 3.6V power supply n- All inputs and outputs TTL patible n- Fully static operation n- Tri-state output n- Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) n- Data retention voltage : 1.2V(MIN.) n- Package : 48-pin 12mm x 20mm TSOP-I n- Green & ROHS pliant FUNCTIONAL BLOCK DIAGRAM Vcc Vss A0-A18 DECODER 512Kx16 MEMORY ARRAY DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte I/O DATA CIRCUIT CE# CE2 WE# OE# LB# UB# CONTROL CIRCUIT COLUMN I/O GENERAL DESCRIPTION The AS6C8016-55TIN is a 8,388,608-bit low power CMOS static random access memory organized as 524,288 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8016-55TIN is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8016-55TIN operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL patible PIN DESCRIPTION SYMBOL DESCRIPTION A0...