AS4C4M4F0 dram equivalent, 5v 4m x 4 cmos dram.
* Organization: 4,194,304 words × 4 bits
* High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
* Low power .
These devices feature a high speed page mode operation where read and write operations within a single row (or page) ca.
A0 to A11
Address inputs
RAS Row address strobe
CAS Column address strobe
WE Write enable
I/O0 to I/O3
Input/output
OE Output enable
VCC GND
Power Ground
Selection guide
Maximum RAS access time Maximum column address access time Maximum CA.
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