* -20V/-3.0A,RDS(ON)=110mΩ@VGS=-4.5V
* -20V/-2.4A,RDS(ON)=135mΩ@VGS=-2.5V
* -20V/-2.0A,RDS(ON)=180mΩ@VGS=-1.8V
* Super high density cell design for extrem.

Pin Description ( SOT-363 ) AFP7611 20V P-Channel Enhancement Mode MOSFET Features
* -20V/-3.0A,RDS(ON)=110mΩ@VGS=.

AFP7611, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts