AFP7463S mosfet equivalent, p-channel mosfet.
z -40V/-15A,RDS(ON)=12mΩ@VGS=-10V z -40V/-10A,RDS(ON)=15mΩ@VGS=-4.5V z Super high density cell design for extremely low
RDS (ON) z DFN5X6-8L package design
Application
z.
Pin Description ( DFN5X6-8L )
Features
z -40V/-15A,RDS(ON)=12mΩ@VGS=-10V z -40V/-10A,RDS(ON)=15mΩ@VGS=-4.5V z Super hi.
AFP7463S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
Image gallery
TAGS
Download (Size : 402.18KB)