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Alfa-MOS
Technology
General Description
AFP3459, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TSOP-6 )
AFP3459
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-4.8A,RDS(ON)=128mΩ@VGS=-10V -60V/-3.6A,RDS(ON)=138mΩ@VGS=-4.