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AFP1933 - P-Channel MOSFET

Download the AFP1933 datasheet PDF. This datasheet also covers the AFP1933-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • -30V/-0.55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.35A, R =DS(ON) 1000 mΩ@ VGS =-4.5V -30V/-0.15A, R =DS(ON) 1800 mΩ@ VGS =-2.5V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP1933-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP1933
Manufacturer Alfa-MOS
File Size 557.83 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1933 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP1913 P-Channel MOSFET
AFP1913E P-Channel MOSFET
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP1933, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFP1933 30V P-Channel Enhancement Mode MOSFET Features -30V/-0.55A, R =DS(ON) 900 mΩ@ VGS =-10V -30V/-0.35A, R =DS(ON) 1000 mΩ@ VGS =-4.5V -30V/-0.15A, R =DS(ON) 1800 mΩ@ VGS =-2.