AFP1913 mosfet equivalent, p-channel mosfet.
z -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 800 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 1600 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage .
Pin Description ( SOT-363 )
AFP1913
20V P-Channel Enhancement Mode MOSFET
Features
z -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS .
AFP1913, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-l.
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