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AFP1913 - P-Channel MOSFET

Download the AFP1913 datasheet PDF. This datasheet also covers the AFP1913-Alfa variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFP1913, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • z -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 800 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 1600 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z SOT-363 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP1913-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP1913
Manufacturer Alfa-MOS
File Size 506.19 KB
Description P-Channel MOSFET
Datasheet download datasheet AFP1913 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFP1913E P-Channel MOSFET
AFP1933 P-Channel MOSFET
AFP1013 P-Channel MOSFET
AFP1013E P-Channel MOSFET
AFP1023 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFP1913, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFP1913 20V P-Channel Enhancement Mode MOSFET Features z -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 800 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 1600 mΩ@ VGS =-1.