-20V/-4.0A,RDS(ON)=48mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=58mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=78mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional o.

Pin Description ( SOT-363 ) AFP1427 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.0A,RDS(ON)=48mΩ@VGS=4.5V -2.

AFP1427, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

AFP1413

AFP1433

AFP1441

AFP1013

AFP1013E

AFP1023

AFP1023E

AFP1033

AFP1033E

AFP1073

AFP1073E

AFP1303

AFP1601E

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