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AFN7608 - N-Channel MOSFET

Download the AFN7608 datasheet PDF. This datasheet also covers the AFN7608-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN7608, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/3.9A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=58mΩ@VGS=2.5V 20V/2.0A,RDS(ON)=70mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN7608-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7608
Manufacturer Alfa-MOS
File Size 681.44 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7608 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN7698 N-Channel MOSFET
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AFN7002DS 60V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN7608, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN7608 20V N-Channel Enhancement Mode MOSFET Features 20V/3.9A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=58mΩ@VGS=2.5V 20V/2.0A,RDS(ON)=70mΩ@VGS=1.