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AFN3458 - N-Channel MOSFET

Download the AFN3458 datasheet PDF. This datasheet also covers the AFN3458-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN3458, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 60V/5.6A,RDS(ON)=60mΩ@VGS=10V 60V/3.8A,RDS(ON)=66mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN3458-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN3458
Manufacturer Alfa-MOS
File Size 569.73 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN3458 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN3458BW N-Channel MOSFET
AFN3454 N-Channel MOSFET
AFN3456 N-Channel MOSFET
AFN3456S N-Channel MOSFET
AFN3400A N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN3458, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TSOP-6 ) AFN3458 60V N-Channel Enhancement Mode MOSFET Features 60V/5.6A,RDS(ON)=60mΩ@VGS=10V 60V/3.8A,RDS(ON)=66mΩ@VGS=4.