60V/5.6A,RDS(ON)=60mΩ@VGS=10V 60V/3.8A,RDS(ON)=66mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ca.

Pin Description ( TSOP-6 ) AFN3458 60V N-Channel Enhancement Mode MOSFET Features 60V/5.6A,RDS(ON)=60mΩ@VGS=10V 60V/3..

AFN3458, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

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