AFN3456 datasheet, mosfet equivalent, Alfa-MOS

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Features and benefits

30V/5.6A,RDS(ON)=40mΩ@VGS=10V 30V/4.2A,RDS(ON)=50mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design Application Power Management.

Application

Pin Description ( TSOP-6 ) AFN3456 30V N-Channel Enhancement Mode MOSFET Features 30V/5.6A,RDS(ON)=40mΩ@VGS=10V 30V/4..

Description

AFN3456, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial ind.

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