AFN3430W mosfet equivalent, n-channel mosfet.
90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/3.2A,RDS(ON)=155mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TSOP-6 package design
Application
LED Display DC.
Pin Description ( TSOP-6 )
AFN3430W
90V N-Channel Enhancement Mode MOSFET
Features
90V/4.0A,RDS(ON)=150mΩ@VGS=10V 90V/.
AFN3430W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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