100V/2.3A,RDS(ON)=285mΩ@VGS=10V 100V/1.8A,RDS(ON)=295mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.

Pin Description ( SOT-363 ) AFN1480 100V N-Channel Enhancement Mode MOSFET Features 100V/2.3A,RDS(ON)=285mΩ@VGS=10V 10.

AFN1480, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other bat.

AFN1414

AFN1424

AFN1432

AFN1440

AFN1010S

AFN1012

AFN1012E

AFN1024

AFN1024E

AFN1026S

AFN1032

AFN1032E

AFN1034

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