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AFN1480 - N-Channel MOSFET

Download the AFN1480 datasheet PDF. This datasheet also covers the AFN1480-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1480, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 100V/2.3A,RDS(ON)=285mΩ@VGS=10V 100V/1.8A,RDS(ON)=295mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-363 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1480-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1480
Manufacturer Alfa-MOS
File Size 534.70 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN1480 Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN1414 N-Channel MOSFET
AFN1424 N-Channel MOSFET
AFN1432 N-Channel MOSFET
AFN1440 N-Channel MOSFET
AFN1010S N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN1480, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-363 ) AFN1480 100V N-Channel Enhancement Mode MOSFET Features 100V/2.3A,RDS(ON)=285mΩ@VGS=10V 100V/1.8A,RDS(ON)=295mΩ@VGS=4.