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AM5853J8R Datasheet, AiT Semiconductor

AM5853J8R mode equivalent, mosfet+ schottky diode -20v p-channel enhancement mode.

AM5853J8R Avg. rating / M : 1.0 rating-12

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AM5853J8R Datasheet

Features and benefits


* MOSFET -20V/-3.5A, RDS(ON) < 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) < 95mΩ@VGS = -2.5V -20V/-1.8A, RDS(ON) < 125mΩ@VGS = -1.8V
* SCHOTTKY VKA =20V, VF0.43(Typ.)@I.

Application

devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully a.

Description

The AM5853 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density. Advanced trench technology. FEATURES
* MOSFET -20V/-3.5A, RDS(ON) < 70mΩ@VGS = -4.5V -20V/-2.4A, RDS(ON) < 95mΩ@VGS = -2.5V -.

Image gallery

AM5853J8R Page 1 AM5853J8R Page 2 AM5853J8R Page 3

TAGS

AM5853J8R
MOSFET
+
SCHOTTKY
DIODE
-20V
P-CHANNEL
ENHANCEMENT
MODE
AiT Semiconductor

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