AM4812 datasheet, mosfet equivalent, AiT Semiconductor

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Features and benefits

* 30V / 7.8A, RDS(ON) = 16mΩ (typ.)@VGS = 10V
* 30V / 5.8A, RDS(ON) = 22mΩ (typ.)@VGS = 4.5V
* Super high density cell design for extremely low RDS(ON)
* .

Application

devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully a.

Description

The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state.

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