AM3415A mosfet equivalent, p-channel enhancement mode power mosfet.
The AM3415A uses advanced trench technology to
*
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as1.8V. This
device is suitabl.
.It is ESD protested.
*
*
The AM3415A is available in SOT-23 package.
*
*
VDS = -20V,ID =-4A RDS(O.
FEATURES
The AM3415A uses advanced trench technology to
*
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as1.8V. This
device is suitable for use as a load switch or in PWM
applications .It is ESD proteste.
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