Datasheet4U Logo Datasheet4U.com

AM2300 - 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet Summary

Features

  • The AM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage.

📥 Download Datasheet

Datasheet preview – AM2300

Datasheet Details

Part number AM2300
Manufacturer AiT Semiconductor
File Size 333.18 KB
Description 20V N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM2300 Datasheet
Additional preview pages of the AM2300 datasheet.

📁 Similar Datasheet

  • AM2300 - N-Channel Enhancement Mode MOSFET (AXElite)
  • AM2300N - N-Channel MOSFET (Analog Power)
  • AM2301 - Digital temperature and humidity sensor (Aosong)
  • AM2301 - P-Channel Enhancement Mode MOSFET (AXElite)
  • AM2301P - P-Channel MOSFET (Analog Power)
  • AM2301PE - P-Channel 20-V (D-S) MOSFET (Analog Power)
  • AM2302 - Digital temperature and humidity sensor (Aosong)
  • AM2302 - N-Channel Enhancement Mode MOSFET (AXElite)
  • AM2302 - Digital relative humidity & temperature emperature sensor (ETC)
  • AM2302N - N-Channel 20-V (D-S) MOSFET (Analog Power)
Other Datasheets by AiT Semiconductor
  • AM2301 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET
  • AM2303 - P-Channel MOSFET
  • AM2303E3R - P-Channel MOSFET
  • AM2303E3VR - P-Channel MOSFET
  • AM2304 - N-CHANNEL ENHANCEMENT MODE MOSFET MOSFET
  • AM2305 - MOSFET -30V P-CHANNEL ENHANCEMENT MODE
  • AM2306 - -30V N-CHANNEL ENHANCEMENT MODE MOSFET
  • AM2308 - 60V 3.8A N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription

Click to expand full text
AiT Semiconductor Inc. www.ait-ic.com   AM2300 MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  20V/4.0A, RDS(ON) =26mΩ(typ.)@VGS =4.5V  20V/3.0A, RDS(ON) =31mΩ(typ.)@VGS =2.5V  20V/2.0A, RDS(ON) =44mΩ(typ.)@VGS =1.
Published: |