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UT7C139 - (UT7C138 / UT7C139) 4Kx8/9 Radiation-Hardened Dual-Port Static RAM

This page provides the datasheet information for the UT7C139, a member of the UT7C138 (UT7C138 / UT7C139) 4Kx8/9 Radiation-Hardened Dual-Port Static RAM family.

Description

The UT7C138/139 consists of an array of 4K words of 8 or 9 bits of dual-port SRAM cells, I/O and address lines, and control signals (CE, OE, R/W).

These control pins permit independent access for reads or writes to any location in memory.

Features

  • q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM www. DataSheet4U. com q CMOS compatible inputs, TTL/CMOS compatible output levels q Three-state bidirectional data bus q Low operating and standby current q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883 Method 1019 - Total-dose: 1.0E6 rads(Si) - Memory Cell LET threshold: 85 MeV-cm2 /mg q q - Latchup immune (LET >100 MeV-c.

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Datasheet preview – UT7C139

Datasheet Details

Part number UT7C139
Manufacturer Aeroflex Circuit Technology
File Size 314.55 KB
Description (UT7C138 / UT7C139) 4Kx8/9 Radiation-Hardened Dual-Port Static RAM
Datasheet download datasheet UT7C139 Datasheet
Additional preview pages of the UT7C139 datasheet.

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Full PDF Text Transcription

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Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM www.DataSheet4U.com q CMOS compatible inputs, TTL/CMOS compatible output levels q Three-state bidirectional data bus q Low operating and standby current q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883 Method 1019 - Total-dose: 1.
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