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UT28F256LV - Radiation-Hardened 32K x 8 PROM

Datasheet Summary

Description

The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device.

Features

  • q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 65ns maximum address access time (-55 oC to +125 oC) q Three-state data bus q Low operating and standby current - Operating: 50.0mA maximum @15.4MHz.
  • Derating: 1.5mA/MHz - Standby: 1.0mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 - Total dose: 1E6 rad(Si) - LETTH(0.25) ~ 100 MeV-cm2/mg - SEL I.

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Datasheet Details

Part number UT28F256LV
Manufacturer Aeroflex Circuit Technology
File Size 66.26 KB
Description Radiation-Hardened 32K x 8 PROM
Datasheet download datasheet UT28F256LV Datasheet
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Full PDF Text Transcription

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Standard Products UT28F256LV Radiation-Hardened 32K x 8 PROM Data Sheet December, 2002 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 65ns maximum address access time (-55 oC to +125 oC) q Three-state data bus q Low operating and standby current - Operating: 50.0mA maximum @15.4MHz • Derating: 1.5mA/MHz - Standby: 1.0mA maximum (post-rad) q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019 - Total dose: 1E6 rad(Si) - LETTH(0.25) ~ 100 MeV-cm2/mg - SEL Immune >128 MeV-cm2/mg - Saturated Cross Section cm2 per bit, 1.0E-11 - 1.
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