UT28F256LV Description
The UT28F256LV amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device.
UT28F256LV Key Features
- Supported by industry standard programmer
- Operating: 50.0mA maximum @15.4MHz
- Derating: 1.5mA/MHz
- Standby: 1.0mA maximum (post-rad)
- Total dose: 1E6 rad(Si)
- LETTH(0.25) ~ 100 MeV-cm2/mg
- SEL Immune >128 MeV-cm2/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
- Memory cell LET threshold: >128 MeV-cm2/mg