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MMDB35-B11 - Silicon Step Recovery Diodes

Download the MMDB35-B11 datasheet PDF. This datasheet also covers the MMDB30-B11 variant, as both devices belong to the same silicon step recovery diodes family and are provided as variant models within a single manufacturer datasheet.

Description

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability.

The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.

Features

  • Output combs to 40+ GHz.
  • Transition times down to 35 ps.
  • Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Mounting / Bonding Temperature Chip and Beam Lead Model MMDB30-B11 MMDB35-B11 MMDB45-B11 MMD805-C12 MMD810-C12 MMD820-C12 MMD830-C11 MMD832-C11 MMD835-C11 MMD837-C11 MMD840-C11 VBR CJ MIN MIN V pF 14 0.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMDB30-B11-Aeroflex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MMDB35-B11
Manufacturer Aeroflex
File Size 605.98 KB
Description Silicon Step Recovery Diodes
Datasheet download datasheet MMDB35-B11 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MMDB35-B11 Silicon Step Recovery Diodes MA-COM
MMDB30-B11 Silicon Step Recovery Diodes MA-COM
MMDB45-B11 Silicon Step Recovery Diodes MA-COM
MMD-04AB Super low resistance MAG LAYERS
MMD-04BZ Super low resistance MAG LAYERS

Other Datasheets by Aeroflex

Part Number Description
MMDB30-B11 Silicon Step Recovery Diodes
MMDB45-B11 Silicon Step Recovery Diodes
MMD805-C12 Silicon Step Recovery Diodes
MMD810-C12 Silicon Step Recovery Diodes
MMD820-C12 Silicon Step Recovery Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Step Recovery Diodes Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming. Features • Output combs to 40+ GHz • Transition times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Mounting / Bonding Temperature Chip and Beam Lead Model MMDB30-B11 MMDB35-B11 MMDB45-B11 MMD805-C12 MMD810-C12 MMD820-C12 MMD830-C11 MMD832-C11 MMD835-C11 MMD837-C11 MMD840-C11 VBR CJ MIN MIN V pF 14 0.15 16 0.13 25 0.11 60 2.5 50 1.