• Part: ULBM2T
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 16.36 KB
Download ULBM2T Datasheet PDF
Advanced Semiconductor
ULBM2T
DESCRIPTION : The ASI ULBM2T is Designed for PACKAGE STYLE TO-39 B ØA 45° C FEATURES : - - - Omnigold™ Metalization System ØD E MAXIMUM RATINGS IC VCB0 VCEO VCES VEBO PDISS TJ TSTG θ JC 0.75 A 36 V 16 V 36 V 4.0 V 5 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 35 OC/W DIM A B C D E F G H MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .016 / 0.407 .020 / 0.508 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 ORDER CODE: ASI10676 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO h FE Cob PG ηC IC = 5 m A IC = 25 m A TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 UNITS V V V m A --- IE = 1.0 m A VCE = 15 V VCE = 5.0 V VCB = 12 V VCC = 12.5 V POUT = 2.0 W IC = 100 m A f = 1.0 MHz f = 470 MHz 20 10 6.0 55 p F d B % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE - NORTH HOLLYWOOD, CA 91605 - (818) 982-1200 - FAX (818)...