TPV596 SILICON N-CHANNEL RF POWER MOSFET
• PG = 12 dB min. at 0.5 W/ 860 MHz
• Common Emitter
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC VCE TJ TSTG PDISS 0.7 A 24 V -65 °C to +200 °C -65 .
up to 400 MHz.
PACKAGE STYLE 280 4L STUD
FEATURES:
• PG = 12 dB min. at 0.5 W/ 860 MHz
• Common Emitter
• .
Image gallery
Download