Datasheet Summary
SILICON N-CHANNEL RF POWER MOSFET
DESCRIPTION:
The TPV596 is Designed for mon Source Push Pull RF Power Applications up to 400 MHz.
PACKAGE STYLE 280 4L STUD
Features
:
- PG = 12 dB min. at 0.5 W/ 860 MHz
- mon Emitter
- Omnigold™ Metallization System
MAXIMUM RATINGS
IC VCE TJ TSTG PDISS 0.7 A 24 V -65 °C to +200 °C -65 °C to +150 °C 8.75 W @ TC = 25 C
NONE
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVCER BVEBO ICBO hFE COB PG IC = 20 mA
TC = 25 C
TEST CONDITIONS
IC = 1.0 mA IC = 20 mA IE = 0.25 mA VCB = 28 V IC = 100 mA VCB = 28 V VCE = 20 V IE = 0.22 A VCE = 5.0 V f = 1.0 MHz f = 860 MHz RBE = 10 Ω
MINIMUM
24 45 50...
